| <^>.mi-(lona.uet oi ducts., una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn darlington power transistor BDW83/a/b/c description ? collector current -lc= 15a ? high dc current gain-hfe= 750(min)@ lc= 6a ? complement to type bdw84/a/b/c applications ? designed for general purpose amplifier and low speed switching applications absolute maximum ratings(ta=25'c) symbol vcer vceo vebo ic ib pc tj tstg parameter collector-emitter voltage collector-emitter voltage BDW83 BDW83a BDW83b BDW83c BDW83 BDW83a BDW83b BDW83c emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ ta=25'c collector power dissipation @ tc=25c junction temperature storage temperature range value 45 60 80 100 45 60 80 100 5 15 0.5 3.5 150 150 -65-150 unit v v v a a w ?c r thermal characteristics symbol | silicon npn darlington power transistor BDW83/a/b/c electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat)-1 vce(sat)-2 vse(on) vecf i ceo icbo iebo hpe-1 hfe-2 parameter collector-emitter breakdown voltage BDW83 BDW83a BDW83b, BDW83c collector-emitter saturation voltage collector-emitter saturation voltage base-emitter on voltage c-e diode forward voltage collector cutoff current collector cutoff current BDW83 BDW83a BDW83b BDW83c BDW83 BDW83a BDW83b BDW83c emitter cutoff current dc current gain dc current gain conditions ic=6a;ib= 12ma ic=15a;ib= 150ma lc= 6a ; vce= 3v if= 15a vce= 30v; ib= 0 vce= 30v; ib= 0 vce= 40v; la= 0 vce= 50v; ib= 0 vcb= 45v;ie= 0 vcb=45v;le=0;tc=150'c vcb= 60v; i e= 0 vcb=60v;ie=0;tc=150"c vcb= 80v; ie= 0 vcb=80v;le=0;tc=150-c vcb=100v;ie=0 vcb=100v;le=0;tc=150'c veb= 5v; lc=0 lc=6a;vce=3v lc=15a; vce=3v min 45 60 80 100 750 100 typ. max 2.5 4.0 2.5 3.5 1.0 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 2.0 20000 unit v v v v v ma ma ma switching times ton toff turn-on time turn-off time lc=10a;lbi=-lb2=40ma; rl= 3 q ; vbe(off)= -4.2v 0.9 7.0 u s u s
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